View V53C16258SHT30_195192.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOSEL VITELIC
V53C16258H HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
25
25 ns 13 ns 10 ns 45 ns
PRELIMINARY
HIGH PERFORMANCE
Max. RAS Access Time, (tRAC) Max. Column Address Access Time, (tCAA) Min. Extended Data Out Mode Cycle Time, (tPC) Min. Read/Write Cycle Time, (tRC)
30
30 ns 16 ns 12 ns 60 ns
35
35 ns 18 ns 14 ns 70 ns
40
40 ns 20 ns 15 ns 75 ns
45
45 ns 22 ns 17 ns 80 ns
50
50 ns 24 ns 19 ns 90 ns
Features
s 256K x 16-bit organization s EDO Page Mode for a sustained data rate of 100 MHz s RAS access time: 25, 30, 35, 40, 45, 50 ns s Dual CAS Inputs s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh s Optional Self Refresh (V53C16258SH) s Refresh Interval: 512 cycles/8 ms s Available in 40-pin 400 mil SOJ and 40/44L-pin 400 mil TSOP-II packages s Single +5V 10% Power Supply s TTL Interface
Description
The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL compatible. Input and output capicatance is significantly lowered to increase performance and minimize loading. These features make the V53C16258H ideally suited for a wide variety of high performance computer systems and peripheral applications.
Device Usage Chart
Operating Temperature Range 0C to 70C -40C to +85C Package Outline K * * T * * 25 * * 30 * * Access Time (ns) 35 * * 40 * * 45 * * 50 * * Power Std. * * Temperature Mark Blank I
V53C16258H Rev. 3.8 November 1999
1
MOSEL VITELIC
Part Name
V53C16258HKxx V53C16258HTxx V53C16258SHKxx V53C16258SHTxx
V53C16258H
Supply Voltage
5V 5V 5V 5V
Self Refresh
No Self Refresh No Self Refresh Optional Standard Self Refresh (8ms) Optional Standard Self Refresh (8ms)
Package
SOJ TSOP SOJ TSOP
Speed
25/30/35/40/45/50 25/30/35/40/45/50 25/30/35/40/45/50 25/30/35/40/45/50
V
5
3
C
16
2
5
8
S
H
40-Pin SOJ PIN CONFIGURATION Top View
Vcc I/O1 I/O2 I/O3 I/O4 Vcc I/O5 I/O6 I/O7 I/O8 NC NC WE RAS NC A0 A1 A2 A3 Vcc
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21
16258H-02
FAMILY
DEVICE S (OPTIONAL STANDARD SELF REFRESH) H (5V) K (SOJ) T (TSOP-II)
PKG
SPEED ( t RAC)
TEMP. PWR. BLANK (0C to 70C) I (-40C to +85C) BLANK (NORMAL) (25 ns) (30 ns) (35 ns) (40 ns) (45 ns) 16258H-01 (50 ns)
Vss I/O16 I/O15 I/O14 I/O13 Vss I/O12 I/O11 I/O10 I/O9 NC LCAS UCAS OE A8 A7 A6 A5 A4 Vss
25 30 35 40 45 50
40/44 Pin Plastic TSOP-II PIN CONFIGURATION Top View
Vcc I/O1 I/O2 I/O3 I/O4 Vcc I/O5 I/O6 I/O7 I/O8
1 2 3 4 5 6 7 8 9 10 44 43 42 41 40 39 38 37 36 35
Pin Names
A0-A8 RAS UCAS LCAS WE OE I/O1-I/O16 VCC VSS NC Address Inputs Row Address Strobe Column Address Strobe/Upper Byte Control Column Address Strobe/Lower Byte Control Write Enable Output Enable Data Input, Output +5V Supply 0V Supply No Connect
Vss I/O16 I/O15 I/O14 I/O13 Vss I/O12 I/O11 I/O10 I/O9
NC NC WE RAS NC A0 A1 A2 A3 Vcc
13 14 15 16 17 18 19 20 21 22
32 31 30 29 28 27 26 25 24 23
16258H-03
NC LCAS UCAS OE A8 A7 A6 A5 A4 Vss
V53C16258H Rev. 3.8 November 1999
2
MOSEL VITELIC
Absolute Maximum Ratings*
Ambient Temperature Under Bias ..................................... -10C to +80C Storage Temperature (plastic) ..... -55C to +125C Voltage Relative to VSS .................-1.0 V to +7.0 V Data Output Current ..................................... 50 mA Power Dissipation .......................................... 1.0 W
*Note: Operation above Absolute Maximum Ratings can adversely affect device reliability.
V53C16258H
TA = 25C, VCC = 5 V 10%, VSS = 0 V
Symbol CIN1 CIN2 COUT Parameter Address Input RAS, CAS, WE, OE Data Input/Output Typ. 3 4 5 Max. 4 5 7 Unit pF pF pF
Capacitance*
* Note: Capacitance is sampled and not 100% tested
Block Diagram
256K x 16
OE WE UCAS LCAS RAS
RAS CLOCK GENERATOR
CAS CLOCK GENERATOR
WE CLOCK GENERATOR
OE CLOCK GENERATOR
VCC VSS
DATA I/O BUS COLUMN DECODERS
Y -Y8 0
I/O 1 I/O 2 I/O 3
SENSE AMPLIFIERS
512 x 16
I/O BUFFER
I/O 4 I/O 5 I/O 6 I/O 7 I/O 8 I/O 9 I/O 10 I/O 11
REFRESH COUNTER
9 A0 A1
ADDRESS BUFFERS AND PREDECODERS
X0 -X8
ROW DECODERS
512
* * *
A7 A8
MEMORY ARRAY 256K x 16
I/O 12 I/O 13 I/O 14 I/O 15 I/O 16
16258H-04
V53C16258H Rev. 3.8 November 1999
3
MOSEL VITELIC
DC and Operating Characteristics (1-2)
TA = 0C to 70C, VCC = 5 V 10%, VSS = 0 V, unless otherwise specified.
Access Time V53C16258H Min.
-10 -10 25 30 35 40 45 50 ICC2 ICC3 VCC Supply Current, TTL Standby VCC Supply Current, RAS-Only Refresh 25 30 35 40 45 50 ICC4 VCC Supply Current, EDO Page Mode Operation 25 30 35 40 45 50 ICC5 VCC Supply Current, Standby, Output Enabled other inputs VSS VCC Supply Current, CMOS Standby Self Refresh Current
V53C16258H
Symbol
ILI ILO ICC1
Parameter
Input Leakage Current (any input pin) Output Leakage Current (for High-Z State) VCC Supply Current, Operating
Typ.
Max.
10 10 260 200 190 180 100 90 2 260 200 190 180 100 90 200 140 130 120 90 80 2
Unit
A A mA
Test Conditions
VSS VIN VCC VSS VOUT VCC RAS, CAS at VIH tRC = tRC (min.)
Notes
1, 2
mA mA
RAS, CAS at VIH other inputs VSS tRC = tRC (min.) 2
mA
Minimum Cycle
1, 2
mA
RAS = VIH, CAS = VIL
1
ICC6
1
mA
RAS VCC - 0.2 V, CAS VCC- 0.2 V, All other inputs VSS CBR Cycle with tRAS tRASS (Min.) and CAS = VIL; WE = VCC-0.2V; A0-A8 and DIN = VCC-0.2V
ICC7
400
A
VCC VIL VIH VOL VOH
Supply Voltage Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage
4.5 -1 2.4
5.0
5.5 0.8 VCC + 1 0.4
V V V V V IOL = 2 mA IOH = -2 mA 3 3
2.4
V53C16258H Rev. 3.8 November 1999
4
MOSEL VITELIC
TA = 0C to 70C, VCC = 5 V 10%, VSS = 0V unless otherwise noted AC Test conditions, input pulse levels 0 to 3V
25 (100 MHz) # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Symbol tRAS tRC tRP tCSH tCAS tRCD tRCS tASR tRAH tASC tCAH tRSH (R) tCRP tRCH tRRH tROH tOAC tCAC tRAC tCAA tLZ tHZ tAR tRAD tRSH (W) tCWL tWCS tWCH Parameter RAS Pulse Width Read or Write Cycle Time RAS Precharge Time CAS Hold Time CAS Pulse Width RAS to CAS Delay Read Command Setup Time Row Address Setup Time Row Address Hold Time Column Address Setup Time Column Address Hold Time RAS Hold Time (Read Cycle) CAS to RAS Precharge Time Read Command Hold Time Referenced to CAS Read Command Hold Time Referenced to RAS RAS Hold Time Referenced to OE Access Time from OE Access Time from CAS Access Time from RAS Access Time from Column Address OE or CAS to Low-Z Output OE or CAS to High-Z Output Column Address Hold Time from RAS RAS to Column Address Delay Time RAS or CAS Hold Time in Write Cycle Write Command to CAS Lead Time Write Command Setup Time Write Command Hold Time 0 0 19 5 30 35 40 45
V53C16258H
AC Characteristics
50
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes 25 45 15 25 4 10 0 0 4 0 4 7 5 0 17 75K 30 60 20 30 5 12 0 0 5 0 5 9 5 0 20 75K 35 70 25 35 6 13 0 0 6 0 5 10 5 0 24 75K 40 75 25 40 7 15 0 0 7 0 5 10 5 0 28 75K 45 80 25 45 8 18 0 0 8 0 6 10 5 0 32 75K 50 90 30 50 9 19 0 0 9 0 7 10 5 0 36 75K ns ns ns ns ns ns ns ns ns ns ns ns ns ns 5 4
15
0
0
0
0
0
0
ns
5
16
4
6
7
8
9
10
ns
17 18 19 20
8 8 25 13
10 10 30 16
11 11 35 18
12 12 40 20
13 13 45 22
14 14 50 24
ns
12
ns 6, 7, 14 ns 6, 8, 9
ns 6, 7, 10
21 22 23
0 0 23 5
0 0 25 6
0 0 30 6
0 0 35 7
0 0 40 8
ns ns ns
16 16
24
8
13
9
14
10
17
12
20
13
23
14
26
ns
11
25
7
9
10
10
10
10
ns
26
5
7
8
10
13
14
ns
27 28
0 4
0 5
0 5
0 5
0 6
0 7
ns ns
12, 13
V53C16258H Rev. 3.8 November 1999
5
MOSEL VITELIC
AC Characteristics (Cont'd)
25 (100 MHz) # 29 30 Symbol tWP tWCR tRWL tDS tDH tWOH tOED tRWC tRRW tCWD tRWD tCRW tAWD tPC tCP tCAR tCAP tDHR tCSR tRPC tCHR tPCM tCOH tOES tOEH Parameter Write Pulse Width Write Command Hold Time from RAS Write Command to RAS Lead Time Data in Setup Time Data in Hold Time Write to OE Hold Time OE to Data Delay Time Read-Modify-Write Cycle Time Read-Modify-Write Cycle RAS Pulse Width CAS to WE Delay RAS to WE Delay in ReadModify-Write Cycle CAS Pulse Width (RMW) Col. Address to WE Delay EDO Fast Page Mode Read or Write Cycle Time CAS Precharge Time Column Address to RAS Setup Time Access Time from Column Precharge Data in Hold Time Referenced to RAS CAS Setup Time CAS-beforeRAS Refresh RAS to CAS Precharge Time CAS Hold Time CAS-beforeRAS Refresh EDO Page Mode Read-Modify-Write Cycle Time Output Hold After CAS Low OE Low to CAS High Setup Time OE Hold Time from WE during Read-Modify Write Cycle 19 30 35 40 45
V53C16258H
50
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes 4 19 5 23 5 25 5 30 6 35 7 40 ns ns
31
7
9
10
10
13
14
ns
32 33 34 35 36 37
0 4 5 5 67 46
0 5 5 5 79 53
0 5 5 5 90 59
0 5 6 6 95 64
0 6 7 7 115 80
0 7 8 8 130 87
ns ns ns ns ns ns
14 14 14 14
38 39
19 36
21 41
23 46
25 51
32 62
34 68
ns ns
12 12
40 41 42
27 24 10
31 27 12
34 29 14
38 31 15
50 41 17
52 42 19
ns ns ns 12
43 44
3 13
3 16
4 18
5 20
6 22
7 24
ns ns
45
15
18
20
22
25
27
ns
7
46
23
25
30
35
40
ns
47
5
7
8
10
10
10
ns
48 49
0 6
0 7
0 8
0 8
0 10
0 10
ns ns
50
35
40
43
47
65
70
ns
51 52
4 3
5 3
5 3
5 3
5 5
5 5
ns ns
53
5
5
5
5
10
10
ns
V53C16258H Rev. 3.8 November 1999
6
MOSEL VITELIC
AC Characteristics (Cont'd)
25 (100 MHz) # 54 55 56 Symbol tOEP tT tREF Parameter OE High Pulse Width Transition Time (Rise and Fall) Refresh Interval (512 Cycles) 30 35 40 45
V53C16258H
50
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes 4 1.5 50 8 5 1.5 50 8 8 1.5 50 8 10 1.5 50 8 10 1.5 50 8 10 1.5 50 8 ns ns ms 15 17
Optional Self Refresh
57 tRASS tRPS tCHS tCHD RAS Pulse Width During Self Refresh RAS Precharge Time During Self Refresh CAS Hold Time Width During Self Refresh CAS Low Time During Self Refresh 100 100 100 100 100 100 s ns 18
58
100
100
100
100
100
100
18
59
100
100
100
100
100
100
ns s
18
60
100
100
100
100
100
100
18
Notes:
1. ICC is dependent on output loading when the device output is selected. Specified ICC (max.) is measured with the output open. 2. ICC is dependent upon the number of address transitions. Specified ICC (max.) is measured with a maximum of two transitions per address cycle in EDO Page Mode. 3. Specified VIL (min.) is steady state operating. During transitions, VIL (min.) may undershoot to -1.0 V for a period not to exceed 20 ns. All AC parameters are measured with VIL (min.) VSS and VIH (max.) VCC. 4. tRCD (max.) is specified for reference only. Operation within tRCD (max.) limits insures that tRAC (max.) and tCAA (max.) can be met. If tRCD is greater than the specified tRCD (max.), the access time is controlled by tCAA and tCAC. 5. Either tRRH or tRCH must be satisified for a Read Cycle to occur. 6. Measured with a load equivalent to one TTL input and 50 pF. 7. Access time is determined by the longest of tCAA, tCAC and tCAP. 8. Assumes that tRAD tRAD (max.). If tRAD is greater than tRAD (max.), tRAC will increase by the amount that tRAD exceeds tRAD (max.). 9. Assumes that tRCD tRCD (max.). If tRCD is greater than tRCD (max.), tRAC will increase by the amount that tRCD exceeds tRCD (max.). 10. Assumes that tRAD tRAD (max.). 11. Operation within the tRAD (max.) limit ensures that tRAC (max.) can be met. tRAD (max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (max.) limit, the access time is controlled by tCAA and tCAC. 12. tWCS, tRWD, tAWD and tCWD are not restrictive operating parameters. 13. tWCS (min.) must be satisfied in an Early Write Cycle. 14. tDS and tDH are referenced to the latter occurrence of CAS or WE. 15. tT is measured between VIH (min.) and VIL (max.). AC-measurements assume tT = 3 ns. 16. Assumes a three-state test load (5 pF and a 500 Ohm Thevenin equivalent). 17. An initial 200 s pause and 8 RAS-containing cycles are required when exiting an extended period of bias without clocks. An extended period of time without clocks is defined as one that exceeds the specified Refresh Interval. 18. One CBR refresh or complete set of row refreah cycles must be completed upon exiting Self Refreah Mode.
V53C16258H Rev. 3.8 November 1999
7
MOSEL VITELIC
Truth Table
Function
Standby Read: Word Read: Lower Byte
V53C16258H
RAS
H L L
LCAS
H L L
UCAS
H L H
WE
X H H
OE
X L L
ADDRESS
X ROW/COL ROW/COL
I/O
High-Z Data Out Lower Byte, Data-Out Upper Byte, High-Z Lower Byte, High-Z Upper Byte, Data-Out Data-In Lower Byte, Data-In Upper Byte, High-Z Lower Byte, High-Z Upper Byte, Data-In Data-Out, Data-In Data-Out Data-In Data-Out, Data-In Data-Out High-Z High-Z High-Z
Notes
Read: Upper Byte
L
H
L
H
L
ROW/COL
Write: Word (Early-Write) Write: Lower Byte (Early)
L L
L L
L H
L L
X X
ROW/COL ROW/COL
Read: Upper Byte (Early)
L
H
L
L
X
ROW/COL
Read-Write EDO Page-Mode Read EDO Page-Mode Write EDO Page-Mode Read-Write Hidden Refresh Read RAS-Only Refresh CBR Refresh Self Refresh
L L L L LHL L HL HL
L HL HL HL L H L L
L HL HL HL L H L H
HL H L HL H X X X
LH L X LH L X X X
ROW/COL COL COL COL ROW/COL ROW X X
1, 2 2 2 1, 2 2
3
Notes:
1. Byte Write cycles LCAS or UCAS active. 2. Byte Read cycles LCAS or UCAS active. 3. Only one of the two CAS must be active (LCAS or UCAS).
V53C16258H Rev. 3.8 November 1999
8
MOSEL VITELIC
Waveforms of Read Cycle
t RAS (1) RAS VIH VIL t CRP (13) t RCD (6) t RAD (24) t ASR (8) ADDRESS VIH VIL ROW ADDRESS t RAH (9) t ASC (10) t CAH (11) t CSH (4) t RSH (R)(12) t CAS (5) t AR (23) t RC (2) t RP (3)
V53C16258H
t CRP (13)
UCAS, LCAS
VIH VIL
COLUMN ADDRESS t CAR (44) t RCH (14) t RRH (15)
t RCS (7) WE VIH VIL
t ROH (16) t CAA (20) t OAC (17) t OES (52)
OE
VIH VIL
I/O
VOH VOL
t RAC (19)
t CAC (18)
t HZ (22) VALID DATA-OUT
t HZ (22)
t LZ (21)
16258H-05
Waveforms of Early Write Cycle
t RC (2) VIH V IL t CSH (4) tCRP (13) VIH UCAS, LCAS V IL t RAH (9) tASR (8) ADDRESS VIH V IL ROW ADDRESS t RAD (24) t CWL (26) VIH V IL t WCR (30) t RWL (31) OE VIH V IL t DHR (46) tDS (32) I/O VIH V IL tDH (33) VALID DATA-IN HIGH-Z
16258H-06
tAR (23)
t RAS (1)
t RP (3)
RAS
t RCD (6)
t RSH (W)(25) t CAS (5)
t CRP (13)
t CAR (44) t CAH (11) tASC (10)
COLUMN ADDRESS t WCH (28) t WP(29) tWCS (27)
WE
Don't Care
V53C16258H Rev. 3.8 November 1999
Undefined
9
MOSEL VITELIC
Waveforms of OE-Controlled Write Cycle
t RAS (1) t RC (2) t RP (3)
V53C16258H
RAS
V IH V IL t CRP (13)
t AR (23)
t RCD (6)
t CSH (4)
UCAS, LCAS
V IH V IL t RAD (24) t RAH (9)
t RSH (W)(12) t CAS (5)
t CRP (13)
t CAR (44) t CAH (11) t ASC (10)
t ASR (8) ADDRESS V IH V IL
ROW ADDRESS
COLUMN ADDRESS t CWL (26) t RWL (31)
t WP (29) WE V IH V IL
t WOH (34) OE V IH V IL t OED (35) V IH V IL t DH (33) t DS (32) VALID DATA-IN
16258H-07
I/O
Waveforms of Read-Modify-Write Cycle
t RWC (36) tRRW (37) RAS VIH VIL t CSH (4) t CRP (13) t RCD (6) VIH VIL t RAH (9) t ASR (8) ADDRESS VIH VIL ROW ADDRESS t RAD (24) t ACS VIH VIL VIH VIL t OED (35) t CAC (18) t RAC (19) I/O VIH VIL VOH VOL t LZ (21) VALID DATA-OUT t HZ (22) t DS (32) VALID DATA-IN
16258H-08
t RP (3)
t AR (23)
t RSH (W)(25) t CRW (40) t t ASC (10) COLUMN ADDRESS t AWD (41) t CWD (38) t RWL (31) t CWL (26)
t CRP (13)
UCAS, LCAS
CAH (11)
t RWD (39)
t WP (29)
WE
t CAA (20) t OAC (17) t OEH (53) t DH (33)
OE
Don't Care
V53C16258H Rev. 3.8 November 1999
Undefined
10
MOSEL VITELIC
Waveforms of EDO Page Mode Read Cycle
V IH V IL t AR (23) t RCD (6) t CRP (13) UCAS, LCAS V IH V IL t RAH (9) t CSH (4) t ASC (10) t CAH (11) COLUMN ADDRESS t RCH (14) t CAH (11) t CAA (20) t OAC (17) OE V IH V IL t RAC (19) t CAC (18) t LZ (21) V OH V OL t RCS (7) t CAR (44) t PC (42) t CP (43) t RSH (R)(12) t CAS (5) t CRP (13) t CAS (5) t RAS (1)
V53C16258H
t
RP (3)
RAS
t CAS (5)
t ASR (8) ADDRESS V IH V IL
t ASC (10) ROW ADDRESS t RCS (7)
t CAH (11) COLUMN ADDRESS t RCS (7) t RCH (14)
COLUMN ADDRESS
WE
V IH V IL t CAP (45) t OES (52) t OEP (54) t CAC (18) t HZ (22) VALID DATA OUT t LZ VALID DATA OUT
16258H-09
t CAA (20) t OAC (17)
t RRH (15)
t CAC (18) t COH (5) VALID DATA OUT
t HZ (22) t HZ (22) t HZ (22)
I/O
Waveforms of EDO Page Mode Write Cycle
t AR (23) RAS V IH V IL t CRP (13) t RCD (6) UCAS, LCAS V IH V IL t RAH (9) t ASR (8) ADDRESS V IH V IL t RAD (24) t WCS (27) t WP (29) WE V IH V IL VIH V IL t DS (32) I/O V IH V IL
VALID DATA IN ROW ADD COLUMN ADDRESS
t RP (3) t RAS (1)
t PC (42) t CP (43) t CAS (5)
t RSH (W)(25) t CAS (5) t CAS (5)
t CRP (13)
t CSH (4) t ASC (10)
COLUMN ADDRESS
t CAH (11)
t CAH (11)
t ASC (10)
t CAR (44) t CAH (11)
COLUMN ADDRESS
t CWL (26)
t WCH (28)
t WCS (27)
t CWL (26)
t WCH (28) t WP (29)
t WCS (27)
t CWL (26) t RWL (31) t WCH (28) t WP (29)
OE
t DH (33)
t DS (32)
t DH (33)
VALID DATA IN
t DS (32)
t DH (33)
VALID DATA IN
OPEN
OPEN
16258H-10
Don't Care
V53C16258H Rev. 3.8 November 1999
Undefined
11
MOSEL VITELIC
Waveforms of EDO Page Mode Read-Write Cycle
RAS VIH V
IL
V53C16258H
t RAS (1)
t RCD (6)
t CSH (4) t PCM (50) t CAS (5)
t RP (3) t RSH (W)(25) t CRP (13) t CAS (5)
t CP (43) t CAS (5)
V UCAS, LCAS V
IH IL
t RAD (24) t RAH (9) t ASR (8) t ASC (10) t ASC (10)
COLUMN ADDRESS
t CAH (11)
COLUMN ADDRESS
t CAH (11)
t ASC (10)
t CAR (44) t CAH (11)
COLUMN ADDRESS
V ADDRESS V
IH IL
ROW ADD
t RWD (39) t CWD (38) V WE V
IH IL
t CWL (26)
t CWD (38) t CWL (26)
t CWD (38) t RWL (31) t CWL (26)
t CAA (20) t OAC (17) V OE V
IH IL
t AWD (41)
t AWD (41) t WP (29) t OAC (17) t OEH (53) t CAA (20) t CAP (43)
t AWD (41) t OAC (17) t WP (29) t WP (29)
t OED (35) t CAC (18) t RAC (19)
t OED (35) t CAC (18) t DH (33)
t CAP (43) t CAA (20)
t HZ (22)
t HZ (22)
t DS (32) I/O V I/OH V I/OL t LZ (21)
OUT IN OUT
t DH (33) t DS (32)
t OED (35) t CAC (18) t HZ (22) t DH (33) t DS (32)
OUT IN
IN
t LZ
t LZ
16258H-11
Waveforms of RAS-Only Refresh Cycle
t RC (2) V IH V IL t CRP (13) UCAS, LCAS V IH V IL t ASR (8) ADDRESS V IH V IL NOTE: ROW ADD
16258H-12
t RAS (1)
t RP (3)
RAS
t RAH (9)
WE, OE = Don't care
Don't Care
V53C16258H Rev. 3.8 November 1999
Undefined
12
MOSEL VITELIC
Waveforms of CAS-before-RAS Refresh Counter Test Cycle
t RAS (1) RAS V IH V IL t CSR (47) UCAS, LCAS V IH V IL V IH V IL READ CYCLE V IH V IL t LZ (21) I/O V IH V IL WRITE CYCLE V IH V IL V IH V IL t I/O V IH V IL
DS (32)
V53C16258H
t RP (3)
t CHR (49)
t CP (43)
t RSH (W)(25) t CAS (5)
ADDRESS
t RCS (7)
t RRH (15) t RCH (14)
WE
t HZ (22)
D OUT t RWL (31) t CWL (26) t WCS (27) t WCH (28)
WE
OE
t DH (33) D IN
16258H-13
Waveforms of CAS-before-RAS Refresh Cycle
t RP (3) RAS V IH V IL t CP (43) V IH V IL t HZ (22) I/O V OH V OL NOTE: WE, OE, A0-A8 = Don't care
16258H-14
t RC (2) t RAS (1) t RP (3)
t RPC (48) t CSR (47)
t CHR (49)
UCAS, LCAS
Don't Care
V53C16258H Rev. 3.8 November 1999
Undefined
13
MOSEL VITELIC
Waveforms of Hidden Refresh Cycle (Read)
tRC (2) VIH V IL tRCD (6) t CRP (13) UCAS, LCAS VIH V IL tASR (8) t RAH (9) ADDRESS VIH V IL VIH V IL t CAA (20) t OAC (17) OE VIH V IL t CAC (18) t LZ (21) t RAC (19) I/O VOH VOL VALID DATA
ROW ADD
V53C16258H
tRC (2) t RP (3) t RAS (1) t RP (3)
t RAS (1) tAR (23)
RAS
tRSH (R)(12)
t CHR (49)
tCRP (13)
tRAD (24) tASC (10) t CAH (11)
COLUMN ADDRESS
tRCS (7) WE
t RRH (15)
t HZ (22) t HZ (22)
16258H-15
Waveforms of Hidden Refresh Cycle (Write)
t RC (2) VIH V IL t RCD (6) t CRP (13) UCAS, LCAS VIH V IL tASR (8) t RAH (9) ADDRESS VIH V IL VIH V IL VIH V IL t DS (32) VIH I/O V IL tDH (33)
VALID DATA-IN ROW ADD
t RC (2) tRP (3) t RAS (1) tRP (3)
t RAS (1) tAR (23)
RAS
t RSH (12)
t CHR (49)
t CRP (13)
tRAD (24) tASC (10) t CAH (11)
COLUMN ADDRESS
t WCS (27) WE
t WCH (28)
OE
t DHR (46)
16258H-16
Don't Care
V53C16258H Rev. 3.8 November 1999
Undefined
14
MOSEL VITELIC
V53C16258H
Waveforms of EDO-Page-Mode Read-Early-Write Cycle (Pseudo Read-Modify-Write)
tRAS RAS V IH V IL tCSH tPC tCRP V IH V IL tAR tRAD tASR V IH V IL tRAH tASC tCAH tASC tCAH tASC tCAH tCAR tRCD tCAS tCP tCAS tPC tCP tRSH tCAS tCP tRP
UCAS, LCAS
ADDRESS
ROW ADDRESS
COLUMN ADDRESS
COLUMN ADDRESS
COLUMN ADDRESS
tRCS V IH V IL tRAC tCAC tOE V IH OE V IL
tRCH tWCS tWCH
WE
tCAA tCAP
tCAA
tCAC
tDS
tDH
tCOH I/O VOH VOL
VALID DATA OUT VALID DATA OUT VALID DATA IN
16258H-17
Waveforms of Self Refresh Cycle
t RP (3)
RAS
t RASS (57)
t RPS (58)
VIH V IL
tRPC (48) tCP (43) tCSR (47) tCHD (60) tCHS (59) tRPC (48)
UCAS, LCAS
VIH V IL
ADDRESS
VIH V IL
I/O
VOH VOL
OPEN
WE
VIH V IL
OE
VIH V IL
16258L 05
Don't Care
V53C16258H Rev. 3.8 November 1999
Undefined
15
MOSEL VITELIC
Functional Description
The V53C16258H is a CMOS dynamic RAM optimized for high data bandwidth, low power applications. It is functionally similar to a traditional dynamic RAM. The V53C16258H reads and writes data by multiplexing an 18-bit address into a 9-bit row and a 9-bit column address. The row address is latched by the Row Address Strobe (RAS). The column address "flows through" an internal address buffer and is latched by the Column Address Strobe (CAS). Because access time is primarily dependent on a valid column address rather than the precise time that the CAS edge occurs, the delay time from RAS to CAS has little effect on the access time.
V53C16258H
Extended Data Output Page Mode
EDO Page operation permits all 512 columns within a selected row of the device to be randomly accessed at a high data rate. Maintaining RAS low while performing successive CAS cycles retains the row address internally and eliminates the need to reapply it for each cycle. The column address buffer acts as a transparent or flow-through latch while CAS is high. Thus, access begins from the occurrence of a valid column address rather than from the falling edge of CAS, eliminating tASC and tT from the critical timing path. CAS latches the address into the column address buffer. During EDO operation, Read, Write, Read-Modify-Write or Read-Write-Read cycles are possible at random addresses within a row. Following the initial entry cycle into Hyper Page Mode, access is tCAA or tCAP controlled. If the column address is valid prior to the rising edge of CAS, the access time is referenced to the CAS rising edge and is specified by tCAP. If the column address is valid after the rising CAS edge, access is timed from the occurrence of a valid address and is specified by tCAA. In both cases, the falling edge of CAS latches the address and enables the output. EDO provides a sustained data rate of 83 MHz for applications that require high bandwidth such as bitmapped graphics or high-speed signal processing. The following equation can be used to calculate the maximum data rate: 512 Data Rate = ---------------------------------------t RC + 511 x t PC
Memory Cycle
A memory cycle is initiated by bringing RAS low. Any memory cycle, once initiated, must not be ended or aborted before the minimum tRAS time has expired. This ensures proper device operation and data integrity. A new cycle must not be initiated until the minimum precharge time tRP/tCP has elapsed.
Read Cycle
A Read cycle is performed by holding the Write Enable (WE) signal High during a RAS/CAS operation. The column address must be held for a minimum specified by tAR. Data Out becomes valid only when tOAC, tRAC, tCAA and tCAC are all satisifed. As a result, the access time is dependent on the timing relationships between these parameters. For example, the access time is limited by tCAA when tRAC, tCAC and tOAC are all satisfied.
Write Cycle
A Write Cycle is performed by taking WE and CAS low during a RAS operation. The column address is latched by CAS. The Write Cycle can be WE controlled or CAS controlled depending on whether WE or CAS falls later. Consequently, the input data must be valid at or before the falling edge of WE or CAS, whichever occurs last. In the CAScontrolled Write Cycle, when the leading edge of WE occurs prior to the CAS low transition, the I/O data pins will be in the High-Z state at the beginning of the Write function. Ending the Write with RAS or CAS will maintain the output in the High-Z state. In the WE controlled Write Cycle, OE must be in the high state and tOED must be satisfied.
Self Refresh
Self Refresh mode provides internal refresh control signals to the DRAM during extended periods of inactivity. Device operation in this mode provides additional power savings and design ease by elimination of external refresh control signals. Self Refresh mode is initiated with a CAS before RAS (CBR) Refresh cycle, holding both RAS low (tRASS) and CAS low (tCHD) for a specified period. Both of these parameters are specified with minimum values to guarantee entry into Self Refresh operation. Once the device has been placed in to Self Refresh mode the CAS clock is no longer required to maintain Self Refresh operation.
V53C16258H Rev. 3.8 November 1999
16
MOSEL VITELIC
The Self Refresh mode is terminated by returning the RAS clock to a high level for a specified (tRPS) minimum time. After termination of the Self Refresh cycle normal accesses to the device may be initiated immediately, providing that subsequent refresh cycles utilize the CAS before RAS (CBR) mode of operation.
V53C16258H
Power-On
After application of the VCC supply, an initial pause of 200 s is required followed by a minimum of 8 initialization cycles (any combination of cycles containing a RAS clock). Eight initialization cycles are required after extended periods of bias without clocks (greater than the Refresh Interval). During Power-On, the VCC current requirement of the V53C16258H is dependent on the input levels of RAS and CAS. If RAS is low during Power-On, the device will go into an active cycle and ICC will exhibit current transients. It is recommended that RAS and CAS track with VCC or be held at a valid VIH during Power-On to avoid current surges.
Data Output Operation
The V53C16258H Input/Output is controlled by OE, CAS, WE and RAS. A RAS low transition enables the transfer of data to and from the selected row address in the Memory Array. A RAS high transition disables data transfer and latches the output data if the output is enabled. After a memory cycle is initiated with a RAS low transition, a CAS low transition or CAS low level enables the internal I/O path. A CAS high transition or a CAS high level disables the I/O path and the output driver if it is enabled. A CAS low transition while RAS is high has no effect on the I/O data path or on the output drivers. The output drivers, when otherwise enabled, can be disabled by holding OE high. The OE signal has no effect on any data stored in the output latches. A WE low level can also disable the output drivers when CAS is low. During a Write cycle, if WE goes low at a time in relationship to CAS that would normally cause the outputs to be active, it is necessary to use OE to disable the output drivers prior to the WE low transition to allow Data In Setup Time (tDS) to be satisfied.
Table 1. V53C16258H Data Output
Operation for Various Cycle Types
Cycle Type
Read Cycles CAS-Controlled Write Cycle (Early Write) WE-Controlled Write Cycle (Late Write) Read-Modify-Write Cycles EDO Read Cycle EDO Write Cycle (Early Write) EDO Read-ModifyWrite Cycle RAS-only Refresh CAS-before-RAS Refresh Cycle CAS-only Cycles
I/O State
Data from Addressed Memory Cell High-Z OE Controlled. High OE = High-Z I/Os Data from Addressed Memory Cell Data from Addressed Memory Cell High-Z Data from Addressed Memory Cell High-Z Data remains as in previous cycle High-Z
V53C16258H Rev. 3.8 November 1999
17
MOSEL VITELIC
Package Outlines
40-Pin Plastic SOJ
1.025 TYP. (1.035 MAX.) [26.04 TYP. (26.29 MAX.)] 40 21
V53C16258H
Unit in inches [mm]
0.400 0.005 [10.16 0.127]
0.440 0.005 [11.18 0.127]
1
20 0.026 MIN [0.660 MIN] 0.144 MAX [3.66 MAX]
0.010
+ 0.004 - 0.002
+0.004 0.025 -0.002
+0.102 0.635 -0.051
+0.102 0.254 -0.051
0.050 0.006 [1.27 0.152]
0.04 [0.1]
0.018
+0.004 -0.002
+0.102 0.457 -0.051
40/44L-Pin TSOP-II
0.0047 - 0.0083 [0.119 - .211] 40 21 Unit in inches [mm]
0.017 - 0.023 [0.432 - 0.584]
0.462 - 0.470 [11.73 - 11.94]
0.396 - 0.404 [10.06 - 10.26]
1 0.0315 BSC [.8001 BSC] 0.039 - 0.047 [0.991 - 1.193] 0.721 - 0.729 [18.31 - 18.52] 0.012 - 0.016 [0.305 - 0.406]
20 0-5 0.002 - 0.008 [0.051 - 0.203] BASE PLANE SEATING PLANE
V53C16258H Rev. 3.8 November 1999
18
0.368 0.010 [9.35 0.254]
MOSEL VITELIC
Notes
V53C16258H
V53C16258H Rev. 3.8 November 1999
19
MOSEL VITELIC
U.S.A.
3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952
WORLDWIDE OFFICES
TAIWAN
7F, NO. 102 MIN-CHUAN E. ROAD, SEC. 3 TAIPEI PHONE: 886-2-2545-1213 FAX: 886-2-2545-1209 NO 19 LI HSIN RD. SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888 FAX: 886-3-566-5888
V53C16258H
UK & IRELAND
SUITE 50, GROVEWOOD BUSINESS CENTRE STRATHCLYDE BUSINESS PARK BELLSHILL, LANARKSHIRE, SCOTLAND, ML4 3NQ PHONE: 01698-748515 FAX: 01698-748516
SINGAPORE
10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 PHONE: 65-3231801 FAX: 65-3237013
HONG KONG
19 DAI FU STREET TAIPO INDUSTRIAL ESTATE TAIPO, NT, HONG KONG PHONE: 852-2666-3307 FAX: 852-2770-8011
JAPAN
WBG MARIVE WEST 25F 6, NAKASE 2-CHOME MIHAMA-KU, CHIBA-SHI CHIBA 261-7125 PHONE: 81-43-299-6000 FAX: 81-43-299-6555
GERMANY (CONTINENTAL EUROPE & ISRAEL)
71083 HERRENBERG BENZSTR. 32 GERMANY PHONE: +49 7032 2796-0 FAX: +49 7032 2796 22
U.S. SALES OFFICES
NORTHWESTERN
3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952
NORTHEASTERN
SUITE 436 20 TRAFALGAR SQUARE NASHUA, NH 03063 PHONE: 603-889-4393 FAX: 603-889-9347
SOUTHWESTERN
302 N. EL CAMINO REAL #200 SAN CLEMENTE, CA 92672 PHONE: 949-361-7873 FAX: 949-361-7807
CENTRAL & SOUTHEASTERN
604 FIELDWOOD CIRCLE RICHARDSON, TX 75081 PHONE: 972-690-1402 FAX: 972-690-0341
(c) Copyright 1999, MOSEL VITELIC Inc.
11/99 Printed in U.S.A.
The information in this document is subject to change without notice. MOSEL VITELIC makes no commitment to update or keep current the information contained in this document. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of MOSEL-VITELIC.
MOSEL VITELIC subjects its products to normal quality control sampling techniques which are intended to provide an assurance of high quality products suitable for usual commercial applications. MOSEL VITELIC does not do testing appropriate to provide 100% product quality assurance and does not assume any liability for consequential or incidental arising from any use of its products. If such products are to be used in applications in which personal injury might occur from failure, purchaser must do its own quality assurance testing appropriate to such applications.
MOSEL VITELIC
3910 N. First Street, San Jose, CA 95134-1501 Ph: (408) 433-6000 Fax: (408) 433-0952 Tlx: 371-9461

▲Up To Search▲

Price & Availability of V53C16258SHT30

	To Download V53C16258SHT30 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .